IXFH40N30Q_11 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
Not for New Designs
IXFH40N30Q
IXFT40N30Q
V_DSS = 300V
I_D25 = 40A
≤ R_DS(on) 85mΩ
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q_g
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_sold
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
300
V
300
V
± 20
V
± 30
V
40
A
160
A
40
A
1.0
J
5
300
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
4
6
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 4mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
300
V
2.0
4.0 V
±100 nA
25 μA
1 mA
85 mΩ
TO-268 (IXFT)
G
S
D (Tab)
TO-247 (IXFH)
G
DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{International Standard Packages}
z _{Low Intrinsic Gate Resistance}
z _{Low Package Inductance}
z _{Fast Intrinsic Rectifier}
z _{Low R and Q}
DS(on)
G
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{Temperature and Lighting Controls}
© 2011 IXYS CORPORATION, All Rights Reserved
DS98504C(03/11)