IXFH40N30Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q_g
IXFH 40N30Q
IXFT 40N30Q
V_DSS = 300 V
I_D25 = 40 A
= R_DS(on) 80 mW
t_rr
£ 250 ns
Preliminary data sheet
Symbol
V_DSS
V
DGR
V
GS
V_GSM
I
D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T
JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
T
C
= 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
300
V
300
V
±20
V
±30
V
40
A
160
A
40
A
30
mJ
1.0
J
5
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 mA
V_GS(th)
V_DS = V_GS, I_D = 4 mA
I_GSS
V_GS = ±20 V_DC, V_DS = 0
I
DSS
V =V
DS
DSS
V_GS = 0 V
T=
J
25°C
T_J = 125°C
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Characteristic Values
Min. Typ. Max.
300
V
2.0
4V
±100 nA
25 mA
1 mA
80 mW
TO-268 (IXFT) Case Style
G
S
TO-247 AD (IXFH)
(TAB)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low Q_g process
• International standard packages
• Low gate charge and capacitance
- easier to drive
- faster switching
• Low R_{DS (on)}
• Unclamped Inductive Switching (UIS)
rated
• Molding epoxies meet UL 94V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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