IXFH36N60P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 36N60P
IXFK 36N60P
IXFT 36N60P
V_DSS = 600 V
I_D25 = 36 A
≤ R_DS(on) 190 mΩ
t_rr ≤ 200 ns
Symbol
Test Conditions
Maximum Ratings TO-247 (IXFH)
V_DSS
V_DGR
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
600
V
600
V
V_GSS
V_GSM
Continuous
Transient
±30
V
±40
V
G
DS
D (TAB)
I
D25
T
C
= 25° C
I_DM
T_C = 25° C, pulse width limited by T_JM
I_AR
T_C = 25° C
E_AR
T_C = 25° C
E_AS
T_C = 25° C
36
A
80
A ^{TO-268 (IXFT) Case Style}
36
A
50
mJ
1.5
J
G
dv/dt
P_D
T_J
T_JM
T_stg
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
20
650
-55 ... +150
150
-55 ... +150
V/ns
S
D (TAB)
W _{TO-264 AA (IXFK)}
°C
°C
°C
M_d
Weight
T_L
T_SOLD
Mounting torque (TO-247 & TO-264)
TO-247
TO-268
TO-264
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
1.13/10 Nm/lb.in.
6
g
5
g
10
g
300
°C
260
°C
G
D
S
G = Gate
S = Source
Features
(TAB)
D = Drain
Tab = Drain
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
µA
V_GS(th)
V_DS = V_GS, I_D = 4 mA
I_GSS
V_GS = ±30 V_DC, V_DS = 0
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
±200 nA
l _{International standard packages}
l _{Fast recovery diode}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
125°
C
100 µA
1000 µA ^Advantages
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
190 m Ω ^l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99383E(02/06)