IXFH36N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 36N50P
IXFT 36N50P
IXFV 36N50P
IXFV 36N50PS
V=
DSS
I_D25 =
≤ R_DS(on)
t_rr
≤
500
36
170
200
V
A
mΩ
ms
TO-247 AD (IXFH)
Symbol
V_DSS
V_DGR
V_GS
V
GSM
I_D25
I_DM
I
AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M
d
Weight
Test Conditions
T_J = 25° C to 175° C
T_J = 25° C to 175° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T
C
= 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 3 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247)
TO-247
TO-268
PLUS220
Maximum Ratings
500
V
500
V
± 30
V
± 40
V ^{TO-268 (IXFT)}
36
A
90
A
36
A
50
mJ
1.5
J
G
S
10
V/ns ^{PLUS220 (IXFV)}
D (TAB)
D (TAB)
540
W
-55 ... +150
°C
G
150
°C
DS
-55 ... +150
°C
D (TAB)
300
°C PLUS220SMD (IXFV...S)
260
°C
1.13/10 Nm/lb.in.
6
g
5
g
2
g
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250µA
V_GS(th)
V_DS = V_GS, I_D = 4 mA
I_GSS
V_GS = ±30 V_DC, V_DS = 0
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.0 V
±100 nA
Features
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
25 µA
500 µA ^Advantages
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
170 mΩ ^l Easy to mount
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99364E(03/06)