IXFH32N50 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t_rr, HDMOS^TM Family
IXFH/IXFT 30N50
IXFH/IXFT 32N50
V
DSS
500 V
500 V
I
D25
30 A
32 A
R
DS(on)
0.16 W
0.15 W
t_rr £ 250 ns
Symbol
Test Conditions
V_DSS
V_DGR
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
V_GS
Continuous
V
Transient
GSM
±30
I_D25
T_C = 25°C
I_DM
T_C = 25°C
pulse width limited by T_JM
I_AR
T_C = 25°C
30N50
32N50
30N50
32N50
30N50
32N50
E_AS
E_AR
dv/dt
T_C = 25°C
I_D = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V,
DSS
T_J £ 150°C, R_G = 2 W
P_D
T_C = 25°C
T_J
T_JM
T_stg
T_L
1.6 mm (0.062 in.) from case for 10 s
M
Mounting torque
d
Weight
Maximum Ratings
500
V
500
V
±20
V
V
30
A
32
A
120
A
128
A
30
A
32
A
1.5
J
45
mJ
5
V/ns
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_DSS
V_GS = 0 V, I_D = 1 mA
V_DSS temperature coefficient
V_GS(th)
V_DS = V_GS, I_D = 4 mA
V_GS(th) temperature coefficient
I_GSS
V_GS = ±20 V_DC, V_DS = 0
I_DSS
V_DS = 0.8 • V_DSS
V =0V
GS
T_J = 25°C
T
J
=
125°C
R_DS(on)
V_GS = 10 V, I_D = 15A
32N50
30N50
Pulse test, t £ 300 ms, duty cycle d £ 2 %
500
V
0.102
%/K
2
4
V
-0.206
%/K
±100
nA
200
mA
1 mA
0.15 W
0.16 W
TO-247 AD (IXFH)
D (TAB)
TO-268 (D3) Case Style
G
S
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
• International standard packages
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Diode
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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