IXFH320N10T2 Datasheet, PDF (1/6 Pages) IXYS Corporation – TrenchT2 HiperFET Power MOSFET

Advance Technical Information
TrenchT2^TM HiperFET^TM
Power MOSFET
IXFH320N10T2
IXFT320N10T2
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V_DSS =
I_D25 =
R_DS(on) ≤
100V
320A
3.5mΩ
TO-247 (IXFH)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_sold
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C (Chip Capability)
Lead Current Limit, RMS
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 175°C
T_C = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 100A, Notes 1 & 2
Maximum Ratings
100
V
100
V
± 20
V
± 30
V
320
A
160
A
800
A
160
A
1.5
J
15
V/ns
1000
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13 / 10
6
4
Nm/lb.in.
g
g
Characteristic Values
Min. Typ. Max.
100
V
2.0
4.0 V
±200 nA
25 μA
1.75 mA
3.5 mΩ
© 2010 IXYS CORPORATION, All Rights Reserved
G
DS
D (Tab)
TO-268 (IXFT)
G
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{High Current Handling Capability}
z _{Fast Intrinsic Diode}
z _{Avalanche Rated}
z _{Fast Intrinsic Diode}
z _{Low RDS(on)}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{Synchronous Recification}
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{AC Motor Drives}
z _{Uninterruptible Power Supplies}
z _{High Speed Power Switching}
Applications
DS100237(2/10)