IXFH30N60Q Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q_g
Preliminary Data Sheet
IXFH 30N60Q
IXFT 30N60Q
V_DSS
I_D25
R_DS(on)
= 600 V
= 30 A
= 0.23 Ω
t_rr ≤ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
TT_JJ
= 25°C to 150°C
= 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
TT_CC
= 25°C
= 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-247
TO-268
Maximum Ratings
600
V
600
V
±20
V
±30
V
30
A
120
A
30
A
45
mJ
1.5
J
10
V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
TVe^GSmp=e0raVtu, rIe^D
= 250µA
Coefficient
V_DS = V_GS, I_D = 4 mA
Temperature Coefficient
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
600
0.095
2.5
- 0.24
V
%/K
4.5 V
%/K
±200 nA
25 µA
1 mA
0.23 Ω
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{Low gate charge}
z _{International standard packages}
z _{Epoxy meet UL 94 V-0, flammability}
classification
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Avalanche energy and current rated}
z _{Fast intrinsic Rectifier}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS99059(06/03)