IXFH30N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
IXFH 30N60P
IXFT 30N60P
IXFV 30N60P
IXFV 30N60PS
V_DSS = 600 V
I_D25 = 30 A
R_DS(on) ≤ 240 m Ω
t_rr
≤ 200 ns
PLUS220 (IXFV)
Symbol
Test Conditions
Maximum Ratings
V
DSS
V_DGR
V_GSS
V
GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F
C
Weight
T
J
= 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting force
(TO-247)
(PLUS220)
TO-247
TO-268
PLUS220
600
V
600
V
±30
V
±40
V
30
A
80
A
30
A
50
mJ
1.5
J
20
V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
11..65/2.5..15
N/lb.
6
g
5
g
4
g
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
600
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.5
5.0 V
I_GSS
V_GS = ±30 V, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
125°
C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
240 m Ω
G
DS
D (TAB)
PLUS220 SMD (IXFV...S)
G
S
TO-247 (IXFH)
D (TAB)
G
DS
TO-268 (IXFT)
D (TAB)
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
l _{Fast Recovery diode}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{International standard packages}
l _{Low package inductance}
- easy to drive and to protect
© 2006 IXYS All rights reserved
DS99316E(03/06)