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IXFH30N40Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class
HiPerFETTM
Power MOSFETs
Q-Class
IXFH 30N40Q
IXFT 30N40Q
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
VDSS
ID25
RDS(on)
= 400 V
= 30 A
= 0.16 W
trr £ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
I DSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
400
V
400
V
±20
V
±30
V
30
A
120
A
30
A
30
mJ
1.5
mJ
5
V/ns
300
W
-55 to +150
°C
150
°C
-55 to +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 mA
400
VDS = VGS, ID = 4 mA
2.0
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4.0 V
±100 nA
25 mA
1 mA
0.16 W
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
Features
l IXYS advanced low Qg process
l Low gate charge and capacitances
- easier to drive
- faster switching
l International standard packages
l Low RDS (on)
l Rated for unclamped Inductive load
switching (UIS) rated
l Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l Easy to mount
l Space savings
l High power density
© 2000 IXYS All rights reserved
98754 (10/00)