IXFH26N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

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PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
IXFH 26N60P
IXFQ 26N60P
IXFT 26N60P
IXFV 26N60P
IXFV 26N60PS
V_DSS = 600 V
I_D25 = 26 A
R_DS(on) ≤ 270 mΩ
t_rr ≤ 200 ns
TO-247 (IXFH)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 5 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body
Mounting torque (TO-3P&TO-247)
Mounting force (PLUS220)
TO-3P
TO-248
TO-268
PLUS220 & PLUS220SMD
Maximum Ratings
600
V
600
V
±30
V
±40
V
26
A
65
A
26
A
40
mJ
1.2
J
10
V/ns
460
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
250
°C
1.13/10 Nm/lb.in.
11..65/2.5..15
N/lb
5.5
g
6.0
g
5.0
g
4.0
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
600
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.5
5.0 V
I_GSS
V_GS = ±30 V, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
270 m Ω
© 2005 IXYS All rights reserved
G
DS
TO-3P (IXFQ)
G
D
S
TO-268 (IXFT)
D (TAB)
G
S
PLUS220 (IXFV)
D (TAB)
G
D
S
PLUS220SMD (IXFV_S)
D (TAB)
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
z _{Fast Recovery diode}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{International standard packages}
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
DS99435(08/05)