IXFH26N50 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
N-Channel Enhancement Mode
High dv/dt, Low t_rr, HDMOS^TM Family
V_DSS I_D25 R_DS(on)
500 V 21 A 0.25 Ω
500 V 24 A 0.23 Ω
500 V 26 A 0.20 Ω
t
rr
≤
250
ns
Symbol
V_DSS
V_DGR
V_GS
V
GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P_D
T
J
T_JM
T
stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
500
V
500
V
±20
V
±30
V
T_C = 25°C
21N50
21
A
24N50
24
A
26N50
26
A
T_C = 25°C, pulse width limited by T_JM 21N50
84
A
24N50
96
A
26N50
104
A
T_C = 25°C
21N50
21
A
24N50
24
A
26N50
26
A
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
30
mJ
5 V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.6 mm (0.062 in.) from case for 10 s
300
°C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
TO-268 (D3) Case Style
G
S
TO-204 AE (IXFM)
(TAB)
(TAB)
G = Gate,
S = Source,
G
D
D = Drain,
TAB = Drain
Features
• International standard packages
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Test Conditions
V_GS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 4 mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V_GS = 0 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
500
2
T_J = 25°C
T_J = 125°C
V
4V
±100 nA
200 µA
1 mA
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power surface mountable package
• High power density
© 1999 IXYS All rights reserved
91525H (9/99)