IXFH24N50Q Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
Q-Class
IXFH/IXFT 24N50Q
IXFH/IXFT 26N50Q
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, High dv/dt
V_DSS
I_D25
500 V 24 A
500 V 26 A
t_rr ≤ 250 ns
R_DS(on)
0.23 Ω
0.20 Ω
Symbol
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
V_DSS
V_DGR
V
GS
V
GSM
I_D25
I_DM
I_AR
E
AR
E_AS
dv/dt
P_D
T
J
T
JM
T
stg
T_L
M_d
Weight
Symbol
V_DSS
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Note 1
T_C = 25°C
24N50
26N50
24N50
26N50
24N50
26N50
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
500
500
±20
±30
24
26
96
104
24
26
30
1.5
5
300
-55 ... +150
150
-55 ... +150
300
1.13/10
6
4
V
V
V
V
A
A
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
g
g
Test Conditions
V_GS = 0 V, I_D = 250 µA
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
500
V
(TAB)
TO-268 (D3) (IXFT) Case Style
G
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
Features
l _{IXYS advanced low Qg process}
l _{International standard packages}
l _{Low RDS (on)}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Fast switching}
l _{Molding epoxies meet UL 94 V-0}
flammability classification
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.5
4.5 V
Advantages
I_GSS
I_DSS
R_DS(on)
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 I_D25
Note 2
T_J = 25°C
T_J = 125°C
24N50Q
26N50Q
±100 nA
25 µA
1 mA
0.23 Ω
0.20 Ω
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2001 IXYS All rights reserved
98512G (5/01)