IXFH23N80Q Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated,
Low Q_g, High dv/dt
IXFH23N80Q
IXFT23N80Q
V_DSS = 800 V
I_D25
= 23 A
R_DS(on) = 0.42 Ω
t_rr ≤ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
F_C
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
TT_CC
=
=
25°C,
25°C
pulse
width
limited
by
T_JM
TT_CC
= 25°C
= 25°C
TI^SJ
≤
≤
I1_D5M0, d_°Ci/d, tR≤_G1=002
A/µs,
Ω
V_DD
≤
V_DSS,
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
Mounting Force
TO-268
TO-247
TO-268
Maximum Ratings
800
V
800
V
±30
V
±40
V
23
A
92
A
23
A
45
mJ
1.5
J
5
V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
20...120/4.5...27 N/lb
6
g
4
g
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 250 µA
800
V_DS = V_GS, I_D = 3 mA
2.5
V_GS = ±30 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.5 V
±100 nA
25 µA
1 mA
0.42 Ω
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
G = Gate
S = Source
TAB = Drain
Features
z _{IXYS advanced low Qg process}
z _{International standard packages}
z _{Epoxy meets UL 94 V-0 flammability}
classification
z _{Low RDS (on) low Qg}
z _{Avalanche energy and current rated}
z _{Fast intrinsic rectifier}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2004 IXYS All rights reserved
DS99060A(02/04)