IXFH22N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFETs

PolarHV^TM HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFH 22N60P
IXFV 22N60P
IXFV 22N60PS
V_DSS = 600 V
I_D25 = 22 A
R_DS(on) ≤ 350 m Ω
t_rr
≤ 200 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I
DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T
L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Tranisent
T_C = 25° C
T
C
=
25°
C,
pulse
width
limited
by
T
JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting Force
(TO-247)
(PLUS220)
TO-247
PLUS220 & PLUS220SMD
TO-247 (IXFH)
Maximum Ratings
600
V
600
V
±30
V
G
DS
±40
V
22
A
66
A _{PLUS220 (IXFV)}
22
A
40
mJ
1.0
J
20
V/ns
GDS
D (TAB)
D (TAB)
400
-55 ... +150
150
-55 ... +150
W _{PLUS220SMD (IXFV...S)}
°C
°C
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
11..65/2.5..15 Nm/lb.
6
g
4
g
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
600
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
3.0
5.5 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
125°
C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
350 m Ω
Features
l _{Fast intrinsic diode}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{International standard packages}
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99315E(03/06)