IXFH21N50F Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerRF Power MOSFETs

Advance Technical Information
HiPerRF^TM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, Low Intrinsic R_g
High dV/dt, Low t_rr
IXFH 21N50F
IXFT 21N50F
V_DSS
I
D25
R_DS(on)
= 500 V
= 21A
= 250mΩ
t
rr
≤
250
ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T
JM
T_stg
T
L
M_d
Weight
Symbol
V
DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
TO-247 AD (IXFH)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-247
TO-247
TO-268
Maximum Ratings
500
V
500
V
±20
V
±30
V
21
A
84
A
21
A
35
mJ
1.5
J
10 V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
V = 0 V, I = 1mA
GS
D
V_DS = V_GS, I_D = 4mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 I_D25
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
500
V
3.0
5.5 V
±100 nA
T_J = 125°C
50 µA
1.5 mA
250 mΩ
(TAB)
TO-268 (IXFT) Case Style
G
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
Features
l _{RF capable MOSFETs}
l _{Double metal process for low gate}
resistance
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
l _{Fast intrinsic rectifier}
Applications
l _{DC-DC converters}
l _{Switched-mode and resonant-mode}
power supplies, >500kHz switching
l _{DC choppers}
l _{13.5 MHz industrial applications}
l _{Pulse generation}
l _{Laser drivers}
l _{RF amplifiers}
Advantages
l _{Space savings}
l _{High power density}
© 2002 IXYS All rights reserved
98884 (1/02)