IXFH21N50 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs MOSFETs

HiPerFET^TM
Power MOSFETs
Q-Class
IXFH 21N50Q
IXFT 21N50Q
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, High dv/dt
V_DSS
I_D25
R_DS(on)
= 500 V
= 21 A
= 0.25 Ω
t_rr ≤ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
500
V
500
V
±30
V
±40
V
21
A
84
A
21
A
30
mJ
1.5
mJ
15
V/ns
280
W
-55 to +150
°C
150
°C
-55 to +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min.
typ.
max.
V_GS = 0 V, I_D = 250 µA
500
V_DS = V_GS, I_D = 4 mA
2.5
V_GS = ±30 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.5 V
±100 nA
25 µA
1 mA
0.25 Ω
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
Features
l _{IXYS advanced low Qg process}
l _{Low gate charge and capacitances}
- easier to drive
- faster switching
l _{International standard packages}
l _{Low RDS (on)}
l _{Rated for unclamped Inductive load}
switching (UIS) rated
l _{Molding epoxies meet UL 94 V-0}
flammability classification
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2004 IXYS All rights reserved
98718B(02/04)