IXFH20N80P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 20N80P
IXFT 20N80P
IXFV 20N80P
IXFV 20N80PS
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
800 V
20 A
520 m Ω
250 ns
Symbol
V_DSS
V_DGR
V_GSS
V
GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T_L
T_SOLD
M
d
F_C
Weight
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T
C
= 25° C
Maximum lead temperature for soldering
Plastic case for 10 s
Mounting torque (TO-247)
Mounting force (PLUS220)
TO-247
TO-268
PLUS220 types
Maximum Ratings
800
V
800
V
TO-247 (IXFH)
± 30
± 40
20
50
10
30
1.0
V
V
TO-268 (IXFT)
A
A
A
G
mJ
S
J
10
V/ns ^{PLUS220 (IXFV)}
(TAB)
D (TAB)
500
W
-55 ... +150
150
-55 ... +150
300
260
°C
G
°C
DS
°C
D (TAB)
PLUS220 SMD(IXFV..S)
°C
°C
1.13/10 Nm/lb.in.
1..65 / 2.5..15
6
5.5
4
N/lb
G
g
S
D (TAB)
g
g
G = Gate
D = Drain
S = Source Tab = Drain
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
800
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
3.0
5.0 V
I
GSS
V
GS
=
±
30
V,
DC
V
DS
=
0
± 200 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
25 µA
1000 µA
R_DS(on)
V_GS = 10 V, I_D = 10 A
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
520 m Ω
Features
l _{International standard packages}
l _{Fast recovery diode}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
DS99511E(03/06)
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