IXFH20N60Q Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt,
Low Gate Charge and Capacitances
IXFH 20N60Q
IXFT 20N60Q
V_DSS = 600 V
I_D25
=
20 A
R_DS(on) = 0.35 Ω
t_rr ≤ 250ns
Symbol
V
DSS
V
DGR
V_GS
V
GSM
I
D25
I_DM
I_AR
E
AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T
L
M_d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
T
C
= 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T
C
= 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Maximum Ratings
600
V
600
V
±30
V
±40
V
20
A
80
A
20
A
30
mJ
1.5
J
15
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
600
V
V
GS(th)
V = V , I = 4 mA
DS
GS D
2.0
4.5 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
25 µA
1 mA
R
DS(on)
V = 10 V, I = 0.5 I
GS
D
D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.35 Ω
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
G = Gate
S = Source
S
D = Drain
TAB = Drain
(TAB)
Features
z _{IXYS advanced low gate charge}
process
z _{International standard packages}
z _{Low gate charge and capacitance}
- easier to drive
- faster switching
z _{Low R}
DS (on)
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Molding epoxies meet UL 94 V-0}
flammability classification
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS98549C(03/03)