IXFH18N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFH 18N60P
IXFV 18N60P
IXFV 18N60PS
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
600 V
18 A
400 mΩ
200 ns
Symbol
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
V
DSS
V_DGR
V
GS
V_GSM
I_D25
I_DM
I_AR
E
AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Tranisent
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T
C
= 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T
J
≤
150°C,
R
G
=
5
Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247)
TO-247
PLUS220 & PLUS220SMD
600
V
600
V
±30
V
±40
V
18
A
45
A
18
A
30
mJ
1.0
J
10
V/ns
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
μA
Characteristic Values
Min. Typ. Max.
600
V
V_GS(th)
V_DS = V_GS, I_D = 2.5 mA
3.0
5.5 V
I_GSS
V_GS = ±30 V, V_DS = 0 V
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
25 μA
250 μA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
400 mΩ
PLUS220 (IXFV)
D (TAB)
G
DS
D (TAB)
PLUS220SMD (IXFV...S)
G
S
D (TAB)
G = Gate
S = Source
Features
D = Drain
TAB = Drain
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99390E(03/06)