IXFH16N90 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t_rr, HDMOS^TM Family
IXFH16N90
IXFX16N90
V_DSS
I_D25
R_DS(on)
= 900 V
= 16 A
= 0.65 W
t_rr £ 200 ns
Preliminary data
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I _DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
900
V
900
V
±20
V
±30
V
16
A
64
A
16
A
45
mJ
5 V/ns
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 250µA
900
V_DS = V_GS, I_D = 5 mA
2.0
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.5 V
±100 nA
25 µA
250 µA
0.65 Ω
TO-247 AD
(IXFH)
(TAB)
PLUS 247^TM
(IXFX)
C (TAB)
G
D
Features
l _{International standard packages}
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
l _{Fast intrinsic Rectifier}
Applications
l _{DC-DC converters}
l _{Battery chargers}
l _{Switched-mode and resonant-mode}
power supplies
l _{DC choppers}
l _{AC motor control}
l _{Temperature and lighting controls}
Advantages
l _{Easy to mount with 1 screw (TO-247)}
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247^TM)
l _{Space savings}
l _{High power density}
© 1998 IXYS All rights reserved
97547(2/98)