IXFH16N80P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV Power MOSFET

PolarHV^TM
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
IXFH 16N80P
IXFT 16N80P
IXFV 16N80P
IXFV 16N80PS
V_DSS = 800 V
I_D25 = 16 A
R_DS(on) ≤ 600 mΩ
t_rr
≤ 250 ns
Symbol
V
DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E
AR
E_AS
dv/dt
P
D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F
C
Weight
Test Conditions
T
J
=
25°C
to
150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T
C
=
25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS
T
J
≤
150°C,
R
G
=
5
Ω
T
C
=
25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247)
Mounting force (PLUS220)
TO-247
TO-268
PLUS220 & PLUS220SMD
TO-247 (IXFH)
Maximum Ratings
800
V
800
V
±30
V
±40
V
16
A
40
A
G
DS
TO-268 (IXFT)
8
A
30
mJ
G
S
1.0
J
PLUS220 (IXFV)
10
V/ns
D (TAB)
460
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
11..65/2.5..15
N/lb
6.0
g
5.0
g
4.0
g
G
D
S
D (TAB)
PLUS220SMD (IXFV...S)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
800
V
V
GS(th)
V = V , I = 4 mA
DS
GS D
3.0
5.0 V
I_GSS
V_GS = ±30 V, V_DS = 0 V
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
25 μA
250 μA
R
DS(on)
V = 10 V, I = 0.5 I
GS
D
D25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
600 mΩ
Features
z _{Fast Recovery diode}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{International standard packages}
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99599E(07/06)