IXFH160N15T2 Datasheet, PDF (1/6 Pages) IXYS Corporation – TrenchT2 HiperFET Power MOSFET

Preliminary Technical Information
TrenchT2^TM HiperFET^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH160N15T2
V_DSS =
I_D25
=
≤ R_DS(on)
t_rr
≤
150V
160A
9.0mΩ
160ns
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 175°C
T_C = 25°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque
Maximum Ratings
150
V
150
V
± 20
V
± 30
V
160
A
440
A
80
A
1.5
J
15
V/ns
880
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
6
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250µA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
150
V
2.5
4.5 V
± 200 nA
10 µA
1 mA
7.7
9.0 mΩ
TO-247
G
DS
Tab
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{International Standard Package}
z _{High Current Handling Capability}
z _{Fast Intrinsic Diode}
z _{Dynamaic dv/dt Rated}
z _{Avalanche Rated}
z _{Low RDS(on)}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{AC Motor Drives}
z _{Uninterruptible Power Supplies}
z _{High Speed Power Switching}
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS100228A(04/10)