IXFH160N15T Datasheet, PDF (1/5 Pages) IXYS Corporation – Power MOSFET TrenchHV HiPerFET

Preliminary Technical Information
Power MOSFET TrenchHV^TM
HiPerFET^TM
IXFH160N15T
N-Channel Enhancement Mode
Avalanche Rated
V=
DSS
I_D25 =
R_DS(on) ≤
150V
160A
9.6mΩ
Symbol
V_DSS
V
DGR
V_GSM
I
D25
I_LRMS
I_DM
I_A
E_AS
dV/dt
P_d
T_J
T_JM
T_stg
T_L
T
SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T
J
=
25°C
to
175°C,
R
GS
=
1MΩ
Transient
T = 25°C
C
Lead Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 175°C
T_C = 25°C
1.6 mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque
Maximum
150
150
± 30
160
75
430
5
1
10
830
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10
6
Ratings
V
V
V
A
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V = 0V
GS
T = 150°C
J
R
DS(on)
V
GS
=
10V,
I
D
=
0.5
•
I,
D25
Note
1
Characteristic Values
Min. Typ. Max.
150
V
2.5
5.0 V
± 200 nA
5 μA
250 μA
8.0
9.6 mΩ
TO-247 (IXFH)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{175 °C Operating Temperature}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
z _{Uninterruptible power supplies}
z _{High speed power switching}
applications
© 2008 IXYS CORPORATION, All rights reserved
DS99965(01/08)