IXFH15N80Q Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
IXFH 15N80Q
IXFT 15N80Q
V_DSS
=
I_D25
=
R_DS(on)
=
t_rr £ 250 ns
800 V
15 A
0.60 W
Symbol
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I_DM
I
AR
E_AR
E_AS
dv/dt
P_D
T_J
T
JM
T
stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T
J
£
150°C,
R
G
=
2
W
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
800
V
800
V
±20
V
±30
V
15
A
60
A
15
A
30
mJ
1.0
J
5
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
V
DSS
V = 0 V, I = 3 mA
GS
D
V_GS(th)
V_DS = V_GS, I_D = 4 mA
I_GSS
V_GS = ±20 V_DC, V_DS = 0
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
R
DS(on)
V = 10 V, I = 0.5 I
GS
D
D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Characteristic Values
Min. Typ. Max.
800
V
2.0
4.5 V
±100 nA
25 mA
1 mA
0.60 W
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) (IXFT) Case Style
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low Q_g process
• International standard packages
• Low R_{DS (on)}
• Unclamped Inductive Switching (UIS)
rated
• Fast switching
• Molding epoxies meet UL94V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98514B (7/00)
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