IXFH150N15P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT™ HiPerFET Power MOSFET

Advance Technical Information
PolarHT^TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
IXFH 150N15P
IXFK 150N15P
V = 150 V
DSS
I_D25 = 150 A
R_DS(on) ≤ 13 mΩ
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I_D(RMS)
I
DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T
JM
T_stg
T_L
M_d
Weight
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
External lead current limit
T
C
=
25°C,
pulse
width
limited
by
T
JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 175°C, R_G = 4 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-3P
TO-264
150
V
150
V
G
±20
V
D
S
±30
V _{TO-264(SP) (IXTK)}
(TAB)
150
A
75
A
340
A
60
A
80
mJ
G
D
2.5
J
S
D (TAB)
10
V/ns
714
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
1.13/10 Nm/lb.in.
5.5
g
10
g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
150
V
V
GS(th)
V = V , I = 4 mA
DS
GS D
3.0
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 175°C
25 µA
500 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
13 mΩ
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2005 IXYS All rights reserved
DS99328(02/05)