IXFH14N80P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 14N80P
IXFQ 14N80P
IXFT 14N80P
IXFV 14N80P
IXFV 14N80PS
V_DSS =
I_D25 =
≤ R_DS(on)
t
rr
≤
800
14
720
250
TO-247 (IXFH)
V
A
mΩ
ms
Symbol
V_DSS
V_DGR
V_GS
V
GSM
I_D25
I_DM
I
AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M
d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T
C
=
25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 5 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247, TO-3P)
PLUS220, PLUS220 SMD
TO-268, TO-3P
TO-247
Maximum Ratings
800
V
800
V
± 30
V
± 40
V
14
A
40
A
7
A
30
mJ
500
mJ
10
V/ns
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
2
g
5.5
g
6
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250μA
Characteristic Values
Min. Typ. Max.
800
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
3.0
5.5 V
I_GSS
V_GS = ±30 V, V_DS = 0 V
±100 nA
I_DSS
R_DS(on)
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
25 μA
1 mA
720 mΩ
© 2006 IXYS All rights reserved
TO-3P (IXFQ)
D (TAB)
G
D
S
TO-268 (IXFT)
G
S
PLUS220 (IXFV)
(TAB)
D (TAB)
G
DS
PLUS220SMD (IXFV...S)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
DS99593E(07/06)