IXFH14N80 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t , HDMOS^TM Family
rr
IXFH14N80
IXFH15N80
V
DSS
I
D25
800 V 14 A
800 V 15 A
t
rr
£ 250 ns
R
DS(on)
0.70 W
0.60 W
Preliminary data
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I
DM
I
AR
E_AR
dv/dt
P
D
T_J
T_JM
T
stg
T_L
M
d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
800
V
800
V
±20
V
±30
V
14N80
14
A
15N80
15
A
14N80
56
A
15N80
60
A
14N80
14
A
15N80
15
A
30
mJ
5
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 3 mA
V temperature coefficient
DSS
V_GS(th)
V_DS = V_GS, I_D = 4 mA
V_GS(th) temperature coefficient
I_GSS
V_GS = ±20 V_DC, V_DS = 0
I_DSS
V_DS = 0.8 V_DSS
V =0V
GS
T_J = 25°C
T
J
=
125°C
R
DS(on)
V = 10 V, I = 0.5 I
GS
D
D25
14N80
15N80
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Characteristic Values
Min. Typ. Max.
800
V
0.096
%/K
2.0
-0.214
4.5 V
%/K
±100 nA
250 mA
1 mA
0.70 W
0.60 W
TO-247 AD
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• International standard packages
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
96523B (3/98)
1-4