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| IXFH14N100Q2_08 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q2-Class | |||
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Preliminary Technical Information
HiPerFETTM
Power MOSFETs
Q2-Class
IXFH14N100Q2
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
VDSS = 1000V
ID25
= 14A
RDS(on) ⤠950mΩ
trr
⤠300ns
TO-247 (IXFH)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ⤠IDM, VDD ⤠VDSS, TJ ⤠150°C
TC = 25°C
1.6mm (0.063 in) from case for 10s
Mounting torque
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS(th)
VGS = 0V, ID = 250μA
VDS = VGS, ID = 4mA
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ⢠ID25, Note 1
Maximum Ratings
1000
V
1000
V
±30
V
±40
V
14
A
56
A
14
A
2.5
J
20
V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
Characteristic Values
Min. Typ. Max.
1000
3.0
V
5.5 V
±200 nA
25 μA
1 mA
950 mΩ
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Double metal process for low gate
resistance
International standard package
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
Easy to mount
Space savings
High power density
© 2008 IXYS CORPORATION, All rights reserved
DS99073A(5/08)
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