IXFH14N100 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
IXFH/IXFT/IXFX14 N100
IXFH/IXFT/IXFX15 N100
N-Channel Enhancement Mode
High dv/dt, Low t_rr, HDMOS^TM Family
V
I
DSS
D25
1000 V 14 A
1000 V 15 A
t_rr £ 200 ns
R
DS(on)
0.75 W
0.70 W
Preliminary data sheet
Symbol
V_DSS
V_DGR
V_GS
V
GSM
I_D25
I_DM
I_AR
E
AR
dv/dt
P_D
T_J
T
JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T
C
= 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T
J
£
150°C,
R
G
=
2
W
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
14N100
15N100
14N100
15N100
14N100
15N100
1000
1000
±20
±30
14
15
56
60
14
15
45
5
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 1 mA
V_DS = V_GS, I_D = 4 mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
14N100
15N100
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1000
2.5
V
4.5 V
±100 nA
250 mA
1 mA
0.75 W
0.70 W
TO-247 AD
(IXFH)
PLUS 247^TM
(IXFX)
(TAB)
G
D
TO-268 (D3)
(IXFT)
(TAB)
G
S
(TAB)
Features
q _{International standard packages}
q _{Low R HDMOS}TM _process
DS (on)
q _{Rugged polysilicon gate cell structure}
q _{Unclamped Inductive Switching (UIS)}
rated
q _{Low package inductance}
- easy to drive and to protect
q _{Fast intrinsic Rectifier}
Applications
q _{DC-DC converters}
q _{Battery chargers}
q _{Switched-mode and resonant-mode}
power supplies
q _{DC choppers}
q _{AC motor control}
q _{Temperature and lighting controls}
Advantages
q _{Easy to mount with 1 screw (TO-247)}
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247^TM)
q _{Highpowersurfacemountablepackage}
q _{High power density}
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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