IXFH140N10P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFETs

Advance Technical Information
PolarHV^TM HiPerFET
IXFH 140N10P
IXFT 140N10P
Power MOSFETs
N-Channel Enhancement Mode
Fast Intrinsic Diode; Avalanche Rated
V=
DSS
I_D25
=
= R_DS(on)
100 V
140 A
11 mΩ
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_D(RMS)
I
DM
I
AR
E_AR
E_AS
dv/dt
P
D
T_J
T
JM
T
stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
T_C = 25°C
External lead current limit
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
TO-247 (IXFT)
100
V
100
V
±20
V
G
DS
140
A
75
A
300
A
TO-268 (IXFT)
60
A
80
mJ
2.5
J
10
V/ns
G
S
D (TAB)
D (TAB)
600
-55 ... +175
175
-55 ... +150
G = Gate
W S = Source
°C
°C
°C ^Features
D = Drain
TAB = Drain
300
°C
1.13/10 Nm/lb.in.
6.0
g
5.0
g
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
V_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
100
V
V_GS(th)
V_DS = V_GS, I_D = 4.0 mA
3.0
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 175°C
25 μA
500 μA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
V_GS = 15 V, I_D = 300 A
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
11 mΩ
9
mΩ
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2004 IXYS All rights reserved
DS99213(02/04)