IXFH13N80Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q Class

HiPerFET^TM
Power MOSFETs
Q Class
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Q_g
IXFH 13N80Q
IXFT 13N80Q
V_DSS
=
I_D25
=
R_DS(on)
=
t_rr £ 250 ns
800 V
13 A
0.70 W
Preliminary data sheet
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T_stg
T_L
M
d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V,
DSS
T_J £ 150°C, R_G = 2 W
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
800
V
800
V
±20
V
±30
V
13
A
52
A
13
A
28
mJ
750
mJ
5
V/ns
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 mA
V_GS(th)
V_DS = V_GS, I_D = 4 mA
I_GSS
V_GS = ±20 V_DC, V_DS = 0
I
DSS
V =V
DS
DSS
V =0V
GS
T=
J
25°C
T
J
=
125°C
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Characteristic Values
Min. Typ. Max.
800
V
2.5
4.5 V
±100 nA
50 mA
1 mA
0.70 W
TO-268 (D3) (IXFT) Case Style
G
S
TO-247 AD (IXFH)
(TAB)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low Q_g process
• International standard packages
• Low R_{DS (on)}
• Unclamped Inductive Switching (UIS)
rated
• Fast switching
• Molding epoxies meet UL94V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98626 (6/99)
1-2