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IXFH13N80 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFM 11 N80
IXFH/IXFM 13 N80
V
DSS
800 V
800 V
I
D25
11 A
13 A
trr £ 250 ns
R
DS(on)
0.95 W
0.80 W
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
I
AR
EAR
dv/dt
P
D
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
800
V
800
V
±20
V
±30
V
11N80
11
A
13N80
13
A
11N80
44
A
13N80
52
A
11N80
11
A
13N80
13
A
30
mJ
5
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
800
VDS = VGS, ID = 4 mA
2.0
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
11N80
13N80
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4.5 V
±100 nA
250 mA
1 mA
0.95 W
0.80 W
TO-247 AD (IXFH)
TO-204 AA (IXFM)
(TAB)
G = Gate,
S = Source,
G
D
D = Drain,
TAB = Drain
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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