IXFH12N90Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q Class

HiPerFET^TM
Power MOSFETs
Q Class
N-Channel Enhancement Mode
Avalanche Rated
Low Q , High dv/dt
g
Preliminary data sheet
IXFH 12N90Q
IXFT 12N90Q
V_DSS
I_D25
R_DS(on)
= 900 V
= 12 A
= 0.9 W
t_rr £ 200 ns
Symbol
V
DSS
V
DGR
V_GS
V_GSM
I
D25
I_DM
I_AR
E_AR
dv/dt
P_D
T_J
T_JM
T_stg
T
L
M
d
Weight
Symbol
V_DSS
V_GS(th)
I
GSS
Test Conditions
T
J
= 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
T
C
= 25°C
T_C = 25°C,
pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T
J
£
150°C,
R
G
=
2
W
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Maximum Ratings
900
V
900
V
±20
V
±30
V
12
A
48
A
12
A
30
mJ
5
V/ns
300
-55 ... +150
150
-55 ... +150
300
1.13/10
6
4
W
°C
°C
°C
°C
Nm/lb.in.
g
g
Test Conditions
V_GS = 0 V, I_D = 3 mA
V_DS = V_GS, I_D = 4 mA
V
GS
=
±20
V,
DC
V
DS
=
0
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
900
V
2.5
5.5 V
±100 nA
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low Q process
g
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low R_{DS (on)}
• Unclamped Inductive Switching (UIS)
rated
• Molding epoxies meet UL94V-0
flammability classification
I
DSS
R_DS(on)
V = 0.8 • V
DS
DSS
V_GS = 0 V
T
J
=
25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
50 mA
1 mA
0.9 W
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98572 (11/98)
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