IXFH12N80P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
IXFH12N80P
IXFQ12N80P
IXFV12N80P
IXFV12N80PS
V_DSS = 800 V
I_D25 = 12 A
≤ R_DS(on) 0.85 Ω
t_rr
≤ 250 ns
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
V
DSS
V_DGR
V
GS
V_GSM
I_D25
I_DM
I_AR
E
AR
E_AS
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Tranisent
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T
C
= 25°C
T_C = 25°C
800
V
800
V
TO-3P (IXFQ)
±30
V
±40
V
12
A
36
A
6
A
G
DS
30
mJ ^{PLUS220 (IXFV)}
0.8
J
D (TAB)
D (TAB)
dv/dt
P_D
T
J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T
J
≤
150°C,
R
G
=
5
Ω
T_C = 25°C
10
360
-55 ... +150
150
-55 ... +150
V/ns
W
GDS
D (TAB)
°C
°C ^{PLUS220 SMD (IXFV...S)}
°C
1.6 mm (0.062 in.) from case for 10 s
300
°C
Plastic body for 10 s
260
°C
Mounting torque (TO-247, TO-3P)
G
1.13/10 Nm/lb.in.
S
Mounting force (PLUS220,PLUS220SMD) 11..65/2.5..15
PLUS220 & PLUS220SMD
4.0
T0-3P
5.5
TO-247
6.0
N/lb.
g
g
g
G = Gate
S = Source
Features
D (TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
μA
V_GS(th)
V_DS = V_GS, I_D = 2.5 mA
Characteristic Values
Min. Typ. Max.
800
V
3.0
5.5 V
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
I_GSS
I
DSS
R_DS(on)
V_GS = ±30 V, V_DS = 0 V
V =V
DS
DSS
V =0V
GS
T
J
=
125°C
V_GS = 10 V, I_D = 0.5 I_D25 , Note 1
±100 nA
25 μA ^Advantages
250 μA _{z Easy to mount}
0.85
Ω ^z Space savings
z _{High power density}
© 2006 IXYS All rights reserved
DS99476E(07/06)