IXFH12N50F Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerRF Power MOSFETs F-Class: MegaHertz Switching

Advanced Technical Information
HiPerRF^TM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, Low Intrinsic R_g
High dV/dt, Low t_rr
IXFH 12N50F
IXFT 12N50F
V_DSS
I
D25
R_DS(on)
= 500 V
= 12 A
= 0.4 W
t
rr
£
250
ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T
stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I
DSS
R_DS(on)
TO-247 AD (IXFH)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS
T
J
£
150°C,
R
G
=
2
W
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
TO-247
TO-264
Maximum Ratings
500
V
500
V
±20
V
±30
V
12
A
48
A
12
A
20
mJ
300
mJ
5 V/ns
180
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.4/6 Nm/lb.in.
6g
4g
Test Conditions
V_GS = 0 V, I_D = 250uA
V_DS = V_GS, I_D = 2.5 mA
V_GS = ±20 V, V_DS = 0
V = 0.8 • V
DS
DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 • I_D25
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
500
V
3.0
5.0 V
±100 nA
T_J = 125°C
50 mA
1 mA
0.4 W
(TAB)
TO-268 (IXFT) Case Style
G
S
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
l _{RF capable MOSFETs}
l _{Double metal process for low gate}
resistance
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
l _{Fast intrinsic rectifier}
Applications
l _{DC-DC converters}
l _{Switched-mode and resonant-mode}
power supplies, >500kHz switching
l _{DC choppers}
l _{13.5 MHz industrial applications}
l _{Pulse generation}
l _{Laser drivers}
l _{RF amplifiers}
Advantages
l _{Space savings}
l _{High power density}
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98737 (07/00)