IXFH12N120 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage HiPerFET Power MOSFET

High Voltage
HiPerFET Power
MOSFET
Preliminary Data Sheet
IXFH 12N120
V = 1200 V
DSS
I_{D (cont)} = 12 A
R_DS(on) = 1.4 Ω
t_rr
≤ 300 ns
Symbol Test Conditions
V_DSS
V
DGR
V_GS
V_GSM
I
D25
I_DM
I
AR
E_AR
E_AS
dv/dt
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
T
C
= 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
P_D
T_J
T_JM
T_stg
M
d
Weight
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1200
1200
±30
±40
12
48
12
30
1.0
10
V
V
V
V
A
A
A
mJ
J
V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
Symbol
V
DSS
V_GS(th)
I_GSS
I
DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V = 0 V, I = 1 mA
GS
D
V_DS = V_GS, I_D = 4 mA
1200
3
V_GS = ±30 V_DC, V_DS = 0
V =V
DS
DSS
V_GS = 0 V
T
J
=
25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
5V
±100 nA
50 µA
3 mA
1.4 Ω
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
z _{International standard package}
JEDEC TO-247 AD
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Fast switching times}
Applications
z _{Switch-mode and resonant-mode}
power supplies
z _{Motor controls}
z _{Uninterruptible Power Supplies (UPS)}
z _{DC choppers}
Advantages
z _{Easy to mount with 1 screw}
(isolated mounting screw hole)
z _{Space savings}
z _{High power density}
© 2005 IXYS All rights reserved
DS99334(02/05)