IXFH12N100Q Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFETTM Power MOSFETs Q Class

HiPerFET^TM
Power MOSFETs
Q Class
IXFH/IXFT12N100Q
IXFH/IXFT10N100Q
N-Channel Enhancement Mode
Avalanche Rated
Low Q_g, High dv/dt
V_DSS I_D25 R_DS(on)
1000 V 12 A 1.05 Ω
1000 V 10 A 1.20 Ω
t_rr ≤ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
T_C = 25°C
T_C = 25°C,
pulse width limited by T_JM
12N100Q
10N100Q
12N100Q
10N100Q
T_C = 25°C
T_C = 25°C
12N100Q
10N100Q
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
12
10
48
40
12
10
30
5
300
-55 ... +150
150
-55 ... +150
300
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
Mounting torque
Test Conditions
V_GS = 0 V, I_D = 3 mA
1.13/10 Nm/lb.in.
TO-247 AD
6
g
TO-268
4
g
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min.
typ.
max.
1000
V
V_DS = V_GS, I_D = 4 mA
2.5
5.5 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = 0.8 • V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
12N100Q
10N100Q
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2002 IXYS All rights reserved
50 µA
1 mA
1.05 Ω
1.20 Ω
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
Features
z _{IXYS advanced low Qg process}
z _{Low gate charge and capacitances}
- easier to drive
- faster switching
z _{International standard packages}
z _{Low RDS (on)}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Molding epoxies meet UL 94 V-0}
flammability classification
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
97539D(12/02)