IXFH12N100P Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar HiPerFET Power MOSFETs

Polar^TM HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFH12N100P
IXFV12N100P
IXFV12N100PS
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
1000
V
1000
V
± 30
V
± 40
V
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
12
24
6
750
15
463
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
°C
°C
°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
°C
260
°C
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
Mounting Force (PLUS220)
11..65/2.5..14.6
N/lb.
TO-247
PLUS220 types
6
g
4
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.5
6.5 V
± 100 nA
20 μA
1.0 mA
1.05 Ω
© 2011 IXYS CORPORATION, All Rights Reserved
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
1000V
12A
1.05Ω
300ns
PLUS220 (IXFV)
G
DS
D (Tab)
PLUS220SMD (IXFV_S)
G
S
D (Tab)
TO-247 (IXFH)
G
D
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{Low RDS(on) and QG}
z _{Avalanche Rated}
z _{Low Package Inductance}
z _{Fast Intrinsic Rectifier}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC-DC Converters}
z _{Laser Drivers}
z _{AC and DC Motor Drives}
z _{Robotics and Servo Controls}
DS99920B(03/11)