IXFH12N100F_03 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerRF Power MOSFETs

HiPerRF^TM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, Low
Intrinsic R_g, High dV/dt, Low t_rr
IXFH12N100F
IXFT12N100F
V_DSS
=
I_D25
=
R_DS(on) ≤
1000V
12A
1.05Ω
t_rr
≤ 250ns
TO-247 (IXFH)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt < 100A/μs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2Ω
T_C = 25°C
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
1000
V
1000
V
± 20
V
± 30
V
12
A
48
A
12
A
1
J
20
V/ns
300
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6
4
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 4mA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.0
5.5 V
± 100 nA
50 μA
1.5 mA
1.05 Ω
© 2003 IXYS CORPORATION, All Rights Reserved
TAB
TO-268 (IXFT)
G
S
TAB
G = Gate D = Drain
S = Source TAB = Drain
Features
z _{RF capable MOSFETs}
z _{Double metal process for low gate}
resistance
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{Fast intrinsic rectifier}
Applications
z _{DC-DC converters}
z _{Switched-mode and resonant-mode}
power supplies, >500kHz switching
z _{DC choppers}
z _{13.5 MHz industrial applications}
z _{Pulse generation}
z _{Laser drivers}
z _{RF amplifiers}
Advantages
z _{Space savings}
z _{High power density}
DS98856A(01/03)