IXFH120N20P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET

Advanced Technical Information
PolarHT^TMHiPerFET IXFH 120N20P
Power MOSFET
IXFK 120N20P
N-Channel Enhancement Mode
Avalanche Rated, Fast Intrinsic
Diode
V_DSS = 200 V
I_D25 = 120 A
R_DS(on) ≤ 22 mΩ
t_rr ≤ 140 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 175°C, R_G = 4 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-264
Maximum Ratings
200
V
200
V
±20
V
±30
V
120
A
75
A
300
A
60
A
60
mJ
2.0
J
10
V/ns
714
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
1.13/10 Nm/lb.in.
6
g
10
g
TO-247 (IXFH)
GSD
TO-264 (IXFK)
D (TAB)
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
200
V
V_GS(th)
V_DS = V_GS, I_D = 250µA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 175°C
25 µA
500 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
22 mΩ
© 2004 IXYS All rights reserved
z _{Easy to mount}
z _{Space savings}
z _{High power density}
DS99223(10/04)