IXFH120N15P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET

PolarHT^TM HiPerFET ^{IXFH 120N15P}
Power MOSFET
IXFT 120N15P
N-Channel Enhancement Mode
Avalanche Energy Rated
Fast Intrinsic Diode
V=
DSS
I
=
D25
≤ R_DS(on)
t_rr
≤
150 V
120 A
16 m Ω
200 ns
Symbol
Test Conditions
Maximum Ratings _{TO-247 (IXFH)}
V_DSS
V_DGR
V
DSS
V_GSM
I_D25
I
L(RMS)
I_DM
I
AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T
L
T_SOLD
M_d
Weight
T_J = 25° C to 175° C
T_J = 25° C to 175° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
External lead current limit
T_C = 25° C, pulse width limited by T_JM
T
C
= 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic case for 10 s
Mounting torque (TO-3P)
TO-247
TO-268
150
V
150
V
±20
V
±30
V
G
120
A
DS
75
A
260
A
60
A ^{TO-268 (IXFT)}
60
mJ
2.0
J
10
V/ns
G
S
D (TAB)
D (TAB)
600
-55 ... +175
175
-55 ... +150
W _{G = Gate}
°C ^{S = Source}
°C
°C
D = Drain
TAB = Drain
300
°C
260
°C Features
1.13/10 Nm/lb.in.
6.0
g
5.0
g
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T
J
=
25°
C,
unless
otherwise
specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
150
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
3.0
5.0 V
I
GSS
V
GS
=
±20
V,
DC
V
DS
=
0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 175° C
25 µA
500 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
16 m Ω
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99210E(12/05)