IXFH110N25T Datasheet, PDF (1/5 Pages) IXYS Corporation – TrenchHV Power MOSFET HiPerFET

TrenchHV^TM Power
MOSFET HiPerFET^TM
N-Channel Enhancement Mode
Avalanche Rated
IXFH110N25T
V_DSS =
I_D25 =
R_DS(on) ≤
250V
110A
24mΩ
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
Lead Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque
Maximum Ratings
250
V
250
V
± 20
V
± 30
V
110
A
75
A
300
A
25
A
1
J
10
V/ns
694
W
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
6
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 3mA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
250
V
2.5
4.5 V
± 200 nA
10 μA
1 mA
24 mΩ
TO-247 (IXFH)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard package}
z _{Avalanche rated}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor drives}
z _{Uninterruptible power supplies}
© 2008 IXYS CORPORATION, All rights reserved
DS99905A(08/08)