IXFH110N10P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET

PolarHT^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFH 110N10P
IXFV 110N10P
IXFV 110N10PS
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
100 V
110 A
15 mΩ
150 ns
Symbol
V_DSS
V
DGR
V_GSS
V_GSM
I_D25
I
D(RMS)
I_DM
I_AR
E
AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T
SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25° C to 175° C
T
J
=
25°
C
to
175°
C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25° C
External lead current limit
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T
C
= 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T
J
≤150° C,
R
G
=
4
Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247)
Mounting Force (PLUS220)
TO-247
PLUS220
Maximum Ratings
100
V
100
V
±20
V
±30
V
110
A
75
A
250
A
60
A
40
mJ
1.0
J
10
V/ns
480
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
11..65 / 2.5..15
N/lb
6
g
4
g
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
100
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150° C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
15 m Ω
TO-247 (IXFH)
G
D
S
PLUS220 (IXFV)
(TAB)
G
DS
D (TAB)
PLUS220SMD (IXFV...S)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l _{Fast intrinsic diode}
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99212E(01/06)