IXFH100N25P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET

PolarHT^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFH 100N25P
V_DSS = 250 V
I_D25 = 100 A
≤ R_DS(on) 27 mΩ
t_rr ≤ 200 ns
Symbol
Test Conditions
Maximum Ratings TO-247 (IXFH)
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I_D(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T_L
T_SOLD
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
250
V
250
V
±20
V
±30
V
100
A
75
A
250
A
60
A
60
mJ
2.0
J
10
V/ns
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
600
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
5.5
g
Features
z _{Fast Intrinsic Diode}
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
250
V
V
GS(th)
V = V , I = 4 mA
DS
GS D
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
25 μA
500 μA
R
DS(on)
V = 10 V, I = 0.5 I
GS
D
D25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
27 mΩ
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99344E(03/06)