IXFG55N50 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs ISOPLUS247

HiPerFET^TM Power MOSFETs
ISOPLUS247^TM
IXFG 55N50
(Electrically Isolated Back Surface)
V_DSS
I_D25
R_DS(on)
= 500 V
= 48 A
= 90 mΩ
Single Die MOSFET
Symbol
V_DSS
V
DGR
V_GS
V
GSM
I_D25
I
DM
I_AR
E_AR
E
AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
Md
Weight
Symbol
V_DSS
V_GS(th)
I
GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25°C
T
C
=
25°C,
Pulse
width
limited
by
T
JM
T_C = 25°C
T_C = 25°C
T
C
= 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T
J
≤
150°C,
R
G
=
2
Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Mounting torque
Maximum Ratings
500
V
500
V
±20
V
±30
V
48
A
220
A
55
A
60
mJ
3
J
5 V/ns
400
W
-40 ... +150
°C
150
°C
-40 ... +150
°C
300
°C
2500
V~
0.4/6 Nm/lb-in
5
g
Test Conditions
V_GS = 0 V, I_D = 1mA
V_DS = V_GS, I_D = 8mA
V
GS
=
±20
V,
V
DS
=
0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = I_T
Note 1
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
500
V
2.5
4.5 V
±200 nA
T_J = 25°C
T_J = 125°C
25 µA
2 mA
90 mΩ
ISO264^TM
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<50pF)}
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Fast intrinsic Rectifier}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Advantages
z _{Easy assembly}
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS99050(05/03)