IXFF24N100_06 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFET

HiPerFET^TM
Power MOSFET
in High Voltage ISOPLUS i4-PAC^TM
IXFF 24N100
I_D25 = 22 A
V_DSS = 1000 V
R_DSon = 390 mΩ
5
1
1
5
2
MOSFET
Symbol
V_DSS
V_GS
I_D25
I_D90
I_F25
I_F90
dv/dt
E_AR
Symbol
R
DSon
V_GSth
I_DSS
I
GSS
Q
g
Q_gs
Q
gd
t_d(on)
t_r
t
d(off)
t_f
V_F
t_rr
R
thJC
Features
Conditions
Maximum Ratings
t• HiPerFETTM technology
- low R_DSon
- low gate charge for high frequency
T_VJ = 25°C to 150°C
1000
±20
u^V
operation
V
- unclamped inductive switching (UIS)
capability
T_C = 25°C
T_C = 90°C
o _{(diode) TC = 25°C}
(diode) T_C = 90°C
- _{VDS < VDSS; IF ≤ 100A;⎮diF/dt⎮≤ 100A/µs; RG = 2 Ω}
T_VJ = 150°C
e _{TC = 25°C}
22 A
15 A
120 A
75 A
5 V/ns
64 mJ
a ^{s Conditions}
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
V
GS
=
10
V;
I_D
=
I_D90
h _{VDS = 20 V; ID = 8 mA;}
V_DS = V_DSS; V_GS = 0 V; T_VJ = 25°C
p^TVJ ^{= 125°C}
2.5
0.25
390 mΩ
5V
0.1 mA
mA
- dv/dt ruggedness
- fast intrinsic reverse diode
• ISOPLUS i4-PAC^TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
V = ±20 V; V = 0 V
GS
DS
200 nA
V_GS= 10 V; V_DS = 500 V; I_D = 12 A
250
nC
55
nC
135
nC
V_GS= 10 V; V_DS = 500 V;
I_D = 12 A; R_G = 1 Ω
35
ns
35
ns
75
ns
21
ns
(diode) I_F = 12 A; V_GS = 0 V
(diode) I_F = 24 A; -di/dt = 100 A/µs; V_DS = 100 V
1.5 V
250
ns
0.32 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2006 IXYS All rights reserved
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