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| IXFF24N100 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM | |||
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Advanced Technical Information
HiPerFETTM
Power Mosfet
in High Voltage ISOPLUS I4-PACTM
IXFF 24N100
ID25 = 22 A
VDSS = 1000 V
RDSon = 390 mW
1
5
MOSFETs
Symbol
VDSS
VGS
ID25
ID90
IF25
IF90
dv/dt
EAR
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1000
V
±20
V
TC = 25°C
TC = 90°C
(diode) TC = 25°C
(diode) TC = 90°C
VDS < VDSS; IF £ 100A;ôdiF/dtô£ 100A/µs; RG = 2 W
TVJ = 150°C
TC = 25°C
22
A
15
A
120
A
75
A
5 V/ns
64
mJ
Symbol
RDSon
VGSth
IDSS
I
GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VF
trr
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = ID90
VDS = 20 V; ID = 8 mA;
VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
V = ±20 V; V = 0 V
GS
DS
2.5
0.25
250
55
135
390 mW
5V
0.1 mA
mA
200 nA
nC
nC
nC
35
ns
35
ns
75
ns
21
ns
(diode) IF = 12 A; VGS = 0 V
(diode) IF = 24 A; -di/dt = 100 A/µs; VDS = 100 V
1.5 V
250
ns
0.32 K/W
Features
⢠HiPerFETTM technology
- low R
DSon
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
⢠ISOPLUS I4-PACTM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
⢠switched mode power supplies
⢠DC-DC converters
⢠resonant converters
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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