IXFE80N50 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Single Die MOSFET

HiPerFET^TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
Preliminary data sheet
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I
D25
I
DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T
stg
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C, Chip capability
T_C = 25°C, Note 1
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
V_ISOL
M_d
Weight
50/60 Hz, RMS t = 1 min
I_ISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
IXFE 80N50
D
G
S
S
Maximum Ratings
500
V
500
V
±20
V
±30
V
72
A
320
A
80
A
64
mJ
6
J
5 V/ns
580
W
-40 ... +150
°C
150
°C
-40 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
19
g
Symbol
V_DSS
V_GH(th)
I
GSS
I_DSS
R_DS(on)
Test Conditions
V_GS = 0 V, I_D = 3 mA
V_DS = V_GS, I_D = 8 mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = I_T
Note 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
500
2
T_J = 25°C
T_J = 125°C
V
4V
±200 nA
100 µA
2 mA
55 mΩ
V_DSS
I_D25
R_DS(on)
= 500 V
= 72 A
= 55 mΩ
ISOPLUS 227^TM (IXFE)
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Conforms to SOT-227B outline
•Low R_{DS (on)} HDMOS^TM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Low cost
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
98898A (5/02)