IXFE73N30Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, High dv/dt
IXFE 73N30Q
V_DSS =
I_D25 =
= R_DS(on)
300 V
66 A
46 mΩ
t_rr ≤ 250 ns
Preliminary data sheet
Symbol
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T
JM
T
stg
V_ISOL
M
d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Note1
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T
J
≤
150°C,
R
G
=
2
Ω
T_C = 25°C
50/60 Hz, RMS t = 1 min
I_ISOL≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
300
V
300
V
±20
V
±30
V
66
A
292
A
73
A
60
mJ
2.5
J
5
V/ns
400
-55 to +150
150
-55 to +150
2500
3000
1.5/13
1.5/13
19
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
V_DSS
V_GS(th)
I
GSS
I
DSS
R
DS(on)
Test Conditions
V_GS = 0 V, I_D = 1 mA
V_DS = V_GS, I_D = 4 mA
V
GS
=
±20
V,
DC
V
DS
=
0
V =V
DS
DSS
V_GS = 0 V
V = 10 V, I = I
GS
DT
Note1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
300
V
2.0
4.0 V
±100 nA
T
J
=
25°C
T_J = 125°C
100 µA
2 mA
46 m Ω
ISOPLUS 227^TM (IXFE)
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Conforms to SOT-227B outline
•Low R_{DS (on)} HDMOS^TM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Low cost
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
98899 (1/02)