IXFE50N50 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFETTM Power MOSFET

HiPerFET^TM
Power MOSFET
Single Die MOSFET
IXFE 55N50
IXFE 50N50
V_DSS
I_D25
500 V 52 A
500 V 47 A
t_rr ≤ 250 ns
R_DS(on)
80 mΩ
100 mΩ
Preliminary data sheet
Symbol Test Conditions
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C; Note 1
I_AR
E_AR
dv/dt
P_D
T_J
T_JM
T_stg
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
V_ISOL
M_d
50/60 Hz, RMS
I_ISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
Weight
Maximum Ratings
55N50
50N50
55N50
50N50
500
V
500
V
±20
V
±30
V
47
A
53
A
200
A
220
A
55
A
60 mJ
5 V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500 V~
3000 V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
19
g
Symbol Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±20V, V_GS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0 V
R_DS(on)
V_GS = 10V, I_D = I_T
Note 2
Characteristic Values
Min. Typ. Max.
500
V
2.5
4.5 V
±100 nA
T_J = 25°C
T_J = 125°C
55N50
50N50
400 µA
2 mA
80 m Ω
100 m Ω
ISOPLUS 227^TM (IXFE)
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• Low cost direct-copper bonded
aluminium package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• 2500V isolation
• Low drain to case capacitance
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
• Conforms to SOT-227B outline
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
98904 (2/02)